HRF3205中文资料

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HRF3205, HRF3205S

Data Sheet

December 2001

100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching

converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

NOTE: Calculated continuous current based on maximum allowable junction temperature. Package limited to 75A continuous, see Figure 9.

Features

100A, 55V (See Note)

Low On-Resistance, rDS(ON) = 0.008 Temperature Compensating PSPICE® Model Thermal Impedance SPICE Model UIS Rating Curve

Related Literature

-TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”

Symbol

D

Ordering Information

PART NUMBERHRF3205HRF3205S

PACKAGETO-220ABTO-263AB

BRAND

HRF3205HRF3205S

G

S

NOTE:When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HRF3205ST.

Packaging

JEDEC TO-220AB

DRAIN (FLANGE)

SOURCEDRAINGATE

GATESOURCE

JEDEC TO-263AB

DRAIN (FLANGE)

©2001 Fairchild Semiconductor CorporationHRF3205, HRF3205S Rev. B